study on volatilization rate of silicon in multicrystalline

Volatilization and condensation behaviours of Mg under

2018/10/1Study on volatilization rate of silicon in multicrystalline silicon preparation from metallurgical grade silicon Vacuum, 85 (2011), pp. 749-754 Article Download PDF View Record in Scopus Google Scholar S. Osada, D. Kuchar, H. Matsuda Thermodynamic and, 12

Effect of Pulling Rate on Multicrystalline Silicon Ingot

In this paper, the structure and composition of multicrystalline silicon ingots prepared by directional solidification with different pulling rates were analyzed to investigate the effect of pulling rate on the multicrystalline silicon ingot. The results showed that the lower

Oxygen and Carbon Distribution in 80Kg

Multicrystalline silicon (mc-Si) wafers produced by directional solidification still dominate the world market, due to the factor quality/price. The performance of solar cell depends directly to the quality of wafer and impurities distribution in mc-Si ingot. In our study we investigate the distribution of the interstitial oxygen (Oi) and substitutional carbon (Cs), from the bottom to top of

Lifetime studies of multicrystalline silicon

Presented at NREL Conference, Colorado 1998. Lifetime studies of multicrystalline silicon Andrs Cuevas Department of Engineering, FEIT, Australian National University, Canberra, ACT 0200 Telephone: 61-2-62493702; e-mail: andres.cuevasanu.edu.au; Fax: 61

Crystal Growth Mechanism of Si in Hypereutectic Al–Si

2018/3/11Y, Morita K (2011) Study on volatilization rate of silicon in multicrystalline silicon preparation from metallurgical grade silicon. Vacuum 85(7):749–754 CrossRef Google Scholar 5. Zheng S, Engh TA, Tangstad M, Luo X (2011) Numerical simulation of Metall

Electrical and optical activities of small

Electrical and optical activities of small-angle grain boundaries in multicrystalline silicon Takashi Sekiguchi1,2, Jun Chen1, Bin Chen1,2, Woong Lee1,3 1 National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan 2 Graduate School of Pure Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8571, Japan

Fracture Analysis and Distribution of Surface Cracks in Multicrystalline

The dimensions of the silicon wafers studied in the present study are 156 156 30.18 mm . 20-node quadratic brick ele-ments (C3D20R) in ABAQUS-standard have been used to model the wafer. Surface cracks with different geometries are placed in the center of

Study on volatilization rate of silicon in multicrystalline

2011/1/21As observed in Table 4, the experimental volatilization rates of silicon are one or two orders of magnitude greater than the theoretically calculated values.In addition, the experimental values changed with evaporation time (see Fig. 4), which is inconsistent with the theoretical prediction based on equation where the volatilization rate is not a time function.

Direct observation of hydrogen at defects in multicrystalline silicon

The material used in this study is a 2 2 cm wafer section taken from ap‐type high‐performance multicrystalline silicon (HPMC) ingot.2,25 The surface saw damage was removed using a chemical etch of FIGURE 1 A, Scanning electron micrograph of the Secco

Volatilization kinetics of silicon carbide in reducing gases:

The volatilization kinetics of single crystal α-SiC, polycrystalline β-SiC, and SiOSUB2/SUB (cristobalite or glass) were determined in HSUB2/SUB-COSUB2/SUB, CO-COSUB2/SUB, and HSUB2/SUB-CO-COSUB2/SUB gas mixtures at oxygen fugacities between 1 log unit above and 10 log units below the iron-wstite (IW) buffer and temperatures in the

Characterization of silicon ingots: Mono

Characterization of silicon ingots: Mono-like versus high-performance multicrystalline Kentaro Kutsukake1,2*, Momoko Deura1, Yutaka Ohno 1, and Ichiro Yonenaga 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan 2Japan Science and Technology Agency, PRESTO, Kawaguchi, Saitama 332-0012, Japan

Temperature sensitivity of multicrystalline silicon solar cells

Paper D. Temperature sensitivity of multicrystalline silicon solar cells Table D.1: Initial dopant concentrations in the melt, with the net doping averaged between 0 and 90% of the relative ingot height, for the ingots with di erent resistivities. Ingot name P (cm 3) B (cm )

Fracture Analysis and Distribution of Surface Cracks in Multicrystalline

The dimensions of the silicon wafers studied in the present study are 156 156 30.18 mm . 20-node quadratic brick ele-ments (C3D20R) in ABAQUS-standard have been used to model the wafer. Surface cracks with different geometries are placed in the center of

Research Article Numerical Analysis of the Dislocation Density in Multicrystalline Silicon

Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process MakotoInoue, 1 SatoshiNakano, 2 HirofumiHarada, 3 YoshijiMiyamura, 3 BingGao, 2 YoshihiroKangawa, 1,2 andKoichiKakimoto 1,2 Research Institute for Applied Mechanics, Kyushu

A COMPARISON OF THE ENVIRONMENTAL IMPACT OF SOLAR POWER GENERATION USING MULTICRYSTALLINE SILICON AND THIN FILM OF AMORPHOUS SILICON

film amorphous silicon solar cells. It takes as its study two of the largest solar cell power plants of their kind in Thailand; a multicrystalline silicon plant in the north (generating 90 MW) and a thin film amorphous silicon plant in the centre (generating 55 MW). The

Environmental Impact Analysis of Solar Power Generation Process Using Multicrystalline and Amorphous Silicon

process and compares two types of silicon solar cell; multicrystalline and amorphous. The process operations that make up the system are the solar cell array, inverter stations, transformer stations, a control center and substations. This study also examines the

Studying precipitation and dissolution of iron in multicrystalline silicon

The multicrystalline silicon wafer used in this study was from a commercial boron-doped directionally-solidified mc-Si ingot, nominally 1.4Ωcm in resistivity, and 330m thick. The wafer is 12.512.5 cm2 in size, and was diced into 16 smaller pieces

Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon

rate in the last decade [1,2]. At present, solar cells based on crystalline silicon (c-Si), including both multicrystalline (mc) and single crystalline (sc) silicon, dominate the global PV market. Due to the relatively low cost associated with the production of mc-Si

Multifunctional effect of Al2O3, SiO2 and CaO on the

This study distinguished the inhibition of each mineral on common stable Pb-containing compounds, including highly volatile PbCl2 and less volatile PbO. Al2O3 can lower the volatilization temperature of Pb by 29 C due to the generation of a eutectic compound and play a minor but non-negligible role in reducing Pb volatilization.

Silicon Pyramid Structure as a Reflectivity Reduction

This study aimed at modifying surface reflectivity of silicon to improve light trapping. A simple and easily controllable etching technique was used to achieve this goal. Methodology: The surface topography of (100) P-type silicon wafers was modified by etching a controllable pyramid structure on these surfaces.

Nucleation in small scale multicrystalline silicon ingots

Small scale solidification experiments were performed in order to study nucleation mechanisms of solar cell silicon. Ingots were grown in a Bridgman furnace; with a high rate (5 cm/min), inducing dendrite-like grains; and at a slow rate (0.2 mm/min), simulating the common slow crystal growth process. Two types of silicon were used, polysilicon and compensated material. The results showed that

Carrier

Carrier-induced degradation (CID) of multicrystalline silicon (mc-Si) solar cells has been receiving significant attention; however, despite this increasing interest, the defect (or defects) responsible for this degradation has not been determined yet. Previous studies have shown that the surface passivation layer and the firing temperature have a significant impact on the rate and extent of

Temperature sensitivity of multicrystalline silicon solar cells

Paper D. Temperature sensitivity of multicrystalline silicon solar cells Table D.1: Initial dopant concentrations in the melt, with the net doping averaged between 0 and 90% of the relative ingot height, for the ingots with di erent resistivities. Ingot name P (cm 3) B (cm )

Silicon Pyramid Structure as a Reflectivity Reduction

This study aimed at modifying surface reflectivity of silicon to improve light trapping. A simple and easily controllable etching technique was used to achieve this goal. Methodology: The surface topography of (100) P-type silicon wafers was modified by etching a controllable pyramid structure on these surfaces.

  • graphite mould for extracting and purifying uct
  • typical properties of edm graphite grades
  • unlock potential and innovation with edm blocks -
  • a new all-metal induction furnace for noble gas
  • enhancement of the electrochemical activity of a
  • the gas permeability of extruded graphite - sciencedirect
  • battery tape materials for li-ion pouch cell manufacturers
  • 8 diy crucible projects - how to make a crucible
  • port for graphitization furnace - sigri
  • wholesale graphite boats for glass industry manufacturer
  • all kinds of industrial graphite crucible company
  • suppliersof graphite semiconductor tooling
  • surface characteristics of selected carbon materials
  • michelin rainforce wiper blade at menards
  • china customized molded graphite rod for melting
  • graphite ring - tennry
  • graphite block - feed the beast wiki
  • colorful guide rings collapsible superhard carbon fiber
  • why use flexible graphite - egc enterprises
  • graphite - svenska tanso ab
  • 「graphite beneficiation milling」 - shrawley
  • 2 tubes of graphite tube-o-lube dry powdered
  • large size custom graphite barrel graphite ring china
  • graphite molds - graphite moulds manufacturers
  • asme digital collection
  • high quality isostatic graphite block rod
  • charlotte sun herald
  • merrick on shark tank - make
  • the toxic truth about carbon nanotubes in water
  • lamiglas graphite g1000 fishing rod blanks -
  • the pennsylvania center for the book - carborundum
  • manufacturing——semi conduct
  • high bulk density graphite block for cement plant
  • china precision hasco oil-free graphite guide bushing
  • china high purity high density isostatic pressing graphite
  • south-korea graphite suppliers manufacturers
  • china graphite mould for copper pressing industry with
  • research and development on advanced graphite